Metal–oxide–semiconductor characterization of silicon...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 1993 / 3 Vol. 11; Iss. 2

Metal–oxide–semiconductor characterization of silicon surfaces thermally oxidized after reactive ion etching and magnetically enhanced reactive ion etching

Settlemyer, Kenneth T.
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Volume:
11
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.586665
Date:
March, 1993
File:
PDF, 611 KB
english, 1993
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