Fabrication of SiC epitaxial structures for devices by the...

Materials Science and Engineering: B 1992 Vol. 11; Iss. 1-4

Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system

M.M. Anikin, A.A. Lebedev, S.N. Pyatko, A.M. Strel'chuk, A.L. Syrkin
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Volume:
11
Year:
1992
Language:
english
Pages:
3
DOI:
10.1016/0921-5107(92)90201-j
File:
PDF, 259 KB
english, 1992
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