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Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states
Ewing, D. J., Porter, L. M., Wahab, Q., Ma, X., Sudharshan, T. S., Tumakha, S., Gao, M., Brillson, L. J.Volume:
101
Year:
2007
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2745436
File:
PDF, 1.01 MB
english, 2007