![](/img/cover-not-exists.png)
Determination of residual strain by reflectivity, X-ray diffraction and Raman spectroscopy in ZnSe epilayers grown on GaAs (001), InP(001) and GaSb(001) by metal-organic vapor phase epitaxy
M. Stoehr, M. Maurin, F. Hamdani, J.P. Lascaray, D. Barbusse, B. Fraisse, R. Fourcade, P. Abraham, Y. MonteilVolume:
21
Year:
1993
Language:
english
Pages:
5
DOI:
10.1016/0921-5107(93)90361-p
File:
PDF, 369 KB
english, 1993