Characterization of crack-free relaxed GaN grown on 2[sup ʺ] sapphire
Kasic, A., Gogova, D., Larsson, H., Ivanov, I., Hemmingsson, C., Yakimova, R., Monemar, B., Heuken, M.Volume:
98
Year:
2005
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2064311
File:
PDF, 584 KB
english, 2005