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Current–voltage characteristics of GaAs/AlAs double-barrier resonant tunneling diodes with a Si-planar-doped barrier
Fukuyama, Hiroyuki, Waho, Takao, Mizutani, TakashiVolume:
79
Year:
1996
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.360972
File:
PDF, 360 KB
english, 1996