Recrystallization of boron-doped and undoped preamorphized...

Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing

J. Fauré, A. Claverie, L. Laanab, P. Bonhomme
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Volume:
22
Year:
1994
Language:
english
Pages:
5
DOI:
10.1016/0921-5107(94)90234-8
File:
PDF, 534 KB
english, 1994
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