![](/img/cover-not-exists.png)
Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing
J. Fauré, A. Claverie, L. Laanab, P. BonhommeVolume:
22
Year:
1994
Language:
english
Pages:
5
DOI:
10.1016/0921-5107(94)90234-8
File:
PDF, 534 KB
english, 1994