Diffraction limited dry etching of GaAs at λ=130 nm

Applied Physics Letters 1994 Vol. 64; Iss. 13

Diffraction limited dry etching of GaAs at λ=130 nm

Li, B., Twesten, I., Krause, H.-P., Schwenter, N.
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Volume:
64
Year:
1994
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.111837
File:
PDF, 699 KB
english, 1994
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