Migration of silicon atoms in planar-doped GaAsAlGaAs...

Materials Science and Engineering: B 1995 Vol. 35; Iss. 1-3

Migration of silicon atoms in planar-doped GaAsAlGaAs modulation doped fluid effect transistor heterostructures grown by molecular beam epitaxy

A.T.G. Carvalho, A.G. de Oliveira, E.S. Alves, M.V. Baeta Moreira
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Volume:
35
Year:
1995
Language:
english
Pages:
7
DOI:
10.1016/0921-5107(95)01332-6
File:
PDF, 654 KB
english, 1995
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