Side-gated GaAsAlGaAs double barrier resonant tunnelling...

Materials Science and Engineering: B 1995 Vol. 35; Iss. 1-3

Side-gated GaAsAlGaAs double barrier resonant tunnelling diodes formed by patterned substrate regrowth

M.A. Quierin, J.H. Burroughes, M.P. Grimshaw, M.L. Leadbeater, D.A. Ritchie, M. Pepper
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Volume:
35
Year:
1995
Language:
english
Pages:
5
DOI:
10.1016/0921-5107(95)01438-1
File:
PDF, 392 KB
english, 1995
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