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Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate
Christy, Dennis, Watanabe, Arata, Egawa, TakashiVolume:
4
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4897338
Date:
October, 2014
File:
PDF, 2.65 MB
english, 2014