Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2011 Vol. 29; Iss. 3
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Self-aligned inversion-channel In[sub 0.2]Ga[sub 0.8]As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al[sub 2]O[sub 3]/Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) as the gate dielectric
Chang, W. H., Chiang, T. H., Wu, Y. D., Hong, M., Lin, C. A., Kwo, J.Volume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3565057
File:
PDF, 686 KB
english, 2011