Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2010 Vol. 28; Iss. 5
InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates
Wu, M., Leach, J. H., Ni, X., Li, X., Xie, J., Doğan, S., Özgür, Ü., Morkoç, H., Paskova, T., Preble, E., Evans, K. R., Lu, Chang-ZhiVolume:
28
Year:
2010
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3481138
File:
PDF, 796 KB
english, 2010