Effects of growth temperature on GaN nucleation layers

Applied Physics Letters 1999 Vol. 75; Iss. 15

Effects of growth temperature on GaN nucleation layers

Yi, M. S., Lee, H. H., Kim, D. J., Park, S. J., Noh, D. Y., Kim, C. C., Je, J. H.
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Volume:
75
Year:
1999
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.124959
File:
PDF, 399 KB
english, 1999
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