Conditions for a temperature compensated silicon field...

Proceedings of the IEEE 1963 Vol. 51; Iss. 7

Conditions for a temperature compensated silicon field effect transistor

Hoerni, J.A., Weir, B.
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Volume:
51
Year:
1963
Language:
english
Journal:
Proceedings of the IEEE
DOI:
10.1109/proc.1963.2424
File:
PDF, 258 KB
english, 1963
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