Comparative study of the substrate-film interfaces of GaAs grown by two molecular beam epitaxial methods
Tappura, K., Salokatve, A., Rakennus, K., Asonen, H., Pessa, M.Volume:
57
Year:
1990
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.103880
File:
PDF, 509 KB
english, 1990