[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - High PAE 1mm AlGaN/GaN HEMTs for 20 W and 43% PAE X-band MMIC Amplifiers
Moon, J.-S., Wong, D., Antcliffe, M., Hashimoto, P., Hu, M., Willadsen, P., Micovic, M., Moyer, H. P., Kurdoghlian, A., MacDonald, P., Wetzel, M., Bowen, R.Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.346801
File:
PDF, 155 KB
english, 2006