Analysis of molecular-beam epitaxially grown ZnSe on GaAs...

Journal of Applied Physics 1987 Vol. 62; Iss. 11

Analysis of molecular-beam epitaxially grown ZnSe on GaAs and GaP by means of ion channeling

Hishida, Yuji, Yoneda, Kiyoshi, Matsunami, Noriaki, Itoh, Noriaki
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Volume:
62
Year:
1987
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.339034
File:
PDF, 593 KB
english, 1987
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