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Morphological evolution of III–V semiconductors and SiO[sub 2] during low energy electron enhanced dry etching
Lee, S. H., Ho, R. M., Goorsky, M. S., Gillis, H. P., Margolese, D. I., Demine, M. A., Anz, S. J.Volume:
22
Year:
2004
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.1752896
File:
PDF, 1.49 MB
english, 2004