International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2014 / 09 Vol. 27; Iss. 5-6
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Modeling of parameters for nano-scale surrounding-gate MOSFET considering quantum mechanical effect
Chanda, Manash, De, Swapnadip, Sarkar, Chandan K.Volume:
27
Language:
english
Journal:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
DOI:
10.1002/jnm.1965
Date:
September, 2014
File:
PDF, 707 KB
english, 2014