Effect of stoichiometry on the dominant deep levels in...

Journal of Applied Physics 1996 Vol. 79; Iss. 8

Effect of stoichiometry on the dominant deep levels in liquid phase epitaxially grown n-type Al0.3Ga0.7As doped with Te

Murai, Akihiko, Nishizawa, Jun-ichi, Oyama, Yutaka, Suto, Ken, Chubachi, Noriyoshi
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Volume:
79
Year:
1996
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.361880
File:
PDF, 342 KB
english, 1996
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