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Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory
Zeng, Baiwen, Xu, Dinglin, Tang, Minghua, Xiao, Yongguang, Zhou, Yuzhou, Xiong, Rongxin, Li, Zheng, Zhou, YichunVolume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4896402
Date:
September, 2014
File:
PDF, 1.24 MB
english, 2014