[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Submicron InP/InGaAs composite channel MOSFETs with selectively regrown N+-source/drain buried in channel undercut

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