Studies of damage in low-power reactive-ion etching of...

Journal of Applied Physics 2001 Vol. 89; Iss. 4

Studies of damage in low-power reactive-ion etching of III–V semiconductors

Rahman, M., Deng, L. G., Wilkinson, C. D. W., van den Berg, J. A.
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Volume:
89
Year:
2001
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1342019
File:
PDF, 402 KB
english, 2001
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