Characteristics of metalorganic remote plasma chemical vapor deposited Al[sub 2]O[sub 3] gate stacks on SiC metal–oxide–semiconductor devices
Lazar, H. R., Misra, V., Johnson, R. S., Lucovsky, G.Volume:
79
Year:
2001
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1392973
File:
PDF, 457 KB
english, 2001