Threshold Voltage Variations Due to Oblique Single Grain...

IEEE Transactions on Electron Devices 2014 / 8 Vol. 61; Iss. 8

Threshold Voltage Variations Due to Oblique Single Grain Boundary in Sub-50-nm Polysilicon Channel

Kim, Jungsik, Rim, Taiuk, Lee, Junyoung, Baek, Chang-Ki, Meyyappan, Meyya, Lee, Jeong-Soo
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2329848
Date:
August, 2014
File:
PDF, 1.90 MB
english, 2014
Conversion to is in progress
Conversion to is failed