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Interface-trap generation at ultrathin SiO2 (4–6 nm)-Si interfaces during negative-bias temperature aging
Ogawa, Shigeo, Shimaya, Masakazu, Shiono, NoboruVolume:
77
Year:
1995
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.358977
File:
PDF, 1.70 MB
english, 1995