Drift behaviour of ISFETs with Si3N4-SiO2 gate insulator

Drift behaviour of ISFETs with Si3N4-SiO2 gate insulator

Peter Hein, Peter Egger
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Volume:
14
Year:
1993
Language:
english
Pages:
2
DOI:
10.1016/0925-4005(93)85131-s
File:
PDF, 159 KB
english, 1993
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