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High-dose helium-implanted single-crystal silicon: Annealing behavior
Tonini, R., Corni, F., Frabboni, S., Ottaviani, G., Cerofolini, G. F.Volume:
84
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.368803
File:
PDF, 963 KB
english, 1998