Optimum growth condition of single-crystalline undoped ZnS grown by the molecular-beam-epitaxial method using a H2S gas source
Kaneda, Shigeo, Shimoguchi, Takefumi, Takahashi, Hironobu, Motoyama, Shin-ici, Kano, Fumihisa, Yokoyama, Meiso, Satou, ShujiVolume:
64
Year:
1988
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.341351
File:
PDF, 598 KB
english, 1988