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Role and mechanism of the formation of hydrogen-induced interface states for platinum/silicon oxide/silicon MOS tunnelling diodes
Hikaru Kobayashi, Hidenori Iwadate, Yoshihiro NakatoVolume:
25
Year:
1995
Language:
english
Pages:
4
DOI:
10.1016/0925-4005(95)85181-x
File:
PDF, 423 KB
english, 1995