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Determination of oxygen and carbon contaminations in InGaAs...

Determination of oxygen and carbon contaminations in InGaAs molecular beam epitaxy using growth interruptions

Harmand, Jean-Christophe, Juhel, Marc
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Volume:
62
Year:
1993
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.109077
File:
PDF, 621 KB
english, 1993
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