Modeling random telegraph signals in the gate current of...

Modeling random telegraph signals in the gate current of metal–oxide–semiconductor field effect transistors after oxide breakdown

Avellán, A., Schroeder, D., Krautschneider, W.
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Volume:
94
Year:
2003
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1579134
File:
PDF, 336 KB
english, 2003
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