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Modeling random telegraph signals in the gate current of metal–oxide–semiconductor field effect transistors after oxide breakdown
Avellán, A., Schroeder, D., Krautschneider, W.Volume:
94
Year:
2003
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1579134
File:
PDF, 336 KB
english, 2003