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Determination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density
Goldmann, C., Krellner, C., Pernstich, K. P., Haas, S., Gundlach, D. J., Batlogg, B.Volume:
99
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2170421
File:
PDF, 378 KB
english, 2006