![](/img/cover-not-exists.png)
[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
Moselund, K. E., Dobrosz, P., Olsen, S., Pott, V., De Michielis, L., Tsamados, D., Bouvet, D., O'Neill, A., Ionescu, A. M.Year:
2007
Language:
english
DOI:
10.1109/iedm.2007.4418899
File:
PDF, 4.54 MB
english, 2007