Composition control of Hf[sub 1−x]Si[sub x]O[sub 2] films deposited on Si by chemical-vapor deposition using amide precursors
Hendrix, B. C., Borovik, A. S., Xu, C., Roeder, J. F., Baum, T. H., Bevan, M. J., Visokay, M. R., Chambers, J. J., Rotondaro, A. L. P., Bu, H., Colombo, L.Volume:
80
Year:
2002
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1465532
File:
PDF, 469 KB
english, 2002