Relationship between x-ray-produced holes and interface...

Relationship between x-ray-produced holes and interface states in metal-oxide-semiconductor capacitors

Hu, Genda J., Johnson, Walter C.
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Volume:
54
Year:
1983
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.332169
File:
PDF, 542 KB
english, 1983
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