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[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA ()] 2006 International SiGe Technology and Device Meeting - Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions
Bargallo Gonzalez, M., Eneman, G., Verheyen, P., Claeys, C., Benedetti, A., Bender, H., De Meyer, K., Simoen, E., Schreutelkamp, R., Washington, L., Nouri, F.Year:
2006
Language:
english
DOI:
10.1109/istdm.2006.246574
File:
PDF, 1.97 MB
english, 2006