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[IEEE IEEE International Integrated Reliability Workshop Final Report, 2004 - S. Lake Tahoe, CA, USA (Oct. 18-21, 2004)] IEEE International Integrated Reliability Workshop Final Report, 2004 - Study of stress-induced leakage current and charge loss of nonvolatile memory i cell with 70Å tunnel oxide using floating-gate integrator technique
Bin Wang,, Chih-Hsin Wang,, Yanjun Ma,, Diorio, C., Humes, T.Year:
2004
Language:
english
DOI:
10.1109/irws.2004.1422732
File:
PDF, 264 KB
english, 2004