Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots
Patillon, J. N., Gamonal, R., Iost, M., André, J. P., Soucail, B., Delalande, C., Voos, M.Volume:
68
Year:
1990
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.346307
File:
PDF, 587 KB
english, 1990