Analysis of gate-bias-induced heating effects in...

IEEE Transactions on Device and Materials Reliability 2002 / 06 Vol. 2; Iss. 2

Analysis of gate-bias-induced heating effects in deep-submicron ESD protection designs

Kwang-Hoon Oh,, Duvvury, C., Banerjee, K., Dutton, R.W.
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Volume:
2
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2002.802113
Date:
June, 2002
File:
PDF, 961 KB
english, 2002
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