A model for the segregation and pileup of boron at the...

Journal of Applied Physics 2001 Vol. 89; Iss. 6

A model for the segregation and pileup of boron at the SiO[sub 2]/Si interface during the formation of ultrashallow p[sup +] junctions

Shima, Akio, Jinbo, Tomoko, Natsuaki, Nobuyoshi, Ushio, Jiro, Oh, J.-H., Ono, Kanta, Oshima, Masaharu
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Volume:
89
Year:
2001
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1338990
File:
PDF, 681 KB
english, 2001
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