Raman spectroscopy of porous and bulk GaP subjected to...

Journal of Applied Physics 2000 Vol. 88; Iss. 12

Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing

Sarua, A., Irmer, G., Monecke, J., Tiginyanu, I. M., Schwab, C., Grob, J.-J., Hartnagel, H. L.
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Volume:
88
Year:
2000
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1322599
File:
PDF, 565 KB
english, 2000
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