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Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
Galatage, R. V., Zhernokletov, D. M., Dong, H., Brennan, B., Hinkle, C. L., Wallace, R. M., Vogel, E. M.Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4886715
Date:
July, 2014
File:
PDF, 1.38 MB
english, 2014