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Localized States at the Conduction-Band Edge of Amorphous Silicon Nitride Detected by Resonance Photoemission
Ley, L., Kärcher, R., Johnson, R. L.Volume:
53
Language:
english
Journal:
Physical Review Letters
DOI:
10.1103/PhysRevLett.53.710
Date:
August, 1984
File:
PDF, 694 KB
english, 1984