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Investigation of the silicon ion density during molecular beam epitaxy growth
Eifler, G., Kasper, E., Ashurov, Kh., Morozov, S.Volume:
20
Year:
2002
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.1474421
File:
PDF, 596 KB
english, 2002