SiO2/amorphous As/GaAs passivation systems prepared at room temperature by 50 Hz plasma-enhanced chemical-vapor deposition
Hashizume, Tamotsu, Yoshino, Masaki, Shimozuma, MitsuoVolume:
76
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.358374
File:
PDF, 904 KB
english, 1994