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PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate
Julio Cárabe, José Javier Gandía, María Teresa GutiérrezVolume:
31
Year:
1993
Language:
english
Pages:
6
DOI:
10.1016/0927-0248(93)90063-9
File:
PDF, 269 KB
english, 1993