Metastability and chemical bonding of s-induced defects in...

Physical Review Letters 1993 / 12 Vol. 71; Iss. 26

Metastability and chemical bonding of s-induced defects in GaAs and InP

Cheong, Byoung-Ho, Chang, K. J.
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Volume:
71
Language:
english
Journal:
Physical Review Letters
DOI:
10.1103/PhysRevLett.71.4354
Date:
December, 1993
File:
PDF, 892 KB
english, 1993
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