Model for the dry etching of heavily doped n-type silicon...

Journal of Applied Physics 1994 Vol. 75; Iss. 11

Model for the dry etching of heavily doped n-type silicon by atomic fluorine in the absence of ion bombardment

Kojima, Masahiko, Kato, Hisao, Gatto, Mitsuru
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Volume:
75
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.356623
File:
PDF, 1.03 MB
english, 1994
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